Carbon Nitride Thin Film‐Sensitized Graphene Field‐Effect Transistor: A Visible‐Blind Ultraviolet Photodetector

Ultraviolet (UV) photodetectors often suffer from the lack of spectral selectivity due to strong interference visible light. In this study, exceptional electrical properties graphene and unique optical carbon nitride thin films (CNTFs) are used design visible-blind UV photodetectors. First, polycrystalline CNTFs with different thicknesses (12–94 nm) produced by thermal vapor condensation. Compared bulk powder, these have a considerable sp2 nitrogen deficiency, which is thickness dependent. addition showing wider bandgap than counterpart, their absorption profile (in ultraviolet–visible range) unique. Critically, absorbance falls sharply above 400 nm, making suitable for ultraviolet photodetection. As result, field-effect transistors (GFETs) sensitized show 103 A W−1 responsivity radiation, stark contrast negligible value obtained in spectrum. The effect film on photoresponse determined, thinner CNTF leading much better device performance. CNTF/GFET also characterized fast response recovery times, 0.5 2.0 s, respectively. These findings pave simple route development sensitive,